CEM6086 PDF 데이터시트 검색

CEM6086 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pu