CHA3666 PDF 데이터시트 검색

CHA3666 RoHS COMPLIANT 6-17GH- Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. VD1 The circuit is manufactured with a standard pHEMT process: 0.25 m gate length, via holes through the substrate, air bridges and electron beam gate lithography. RFin VD2 RFout UMS P1 P2 N2 Main Features 24,0 ■ Broadband performance 6-17GHz ■ 1.8dB noise figure ■ 26dBm 3rd order intercept point ■ 17dBm pow