CJP80N04 PDF 데이터시트 검색

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N04 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 7mΩ@10V 40 V 80A 20mΩ@4.5V DESCRIPTION The CJP80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-220-3L-C 1. GATE 2. DRAIN 3. SOURCE 123 FEATURES - High density cell design for ultra low RDS(ON) - Fully characterized Avalanche voltage a