CJU50N03 PDF 데이터시트 검색

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX 11mΩ@10V 16mΩ@5V ID 50A DESCRIPTION The CJU50N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE 2 1 3 FEATURES - High density cell design for ultra low RDS(ON) - Fully characterized Avalanche voltage and c