DFP85N06 PDF 데이터시트 검색

DFP85N06 N-Channel MOSFET Features Low RDS(on) (0.010 )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv, dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.010 ohm ID = 85A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control ,