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DMN1032UCB4 PDF 데이터시트 검색

 



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N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCED INFORMATION Product Summary VDSS 12V RDS(on) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Applications DC-DC Converters Battery Management Load Switch
Diodes
Diodes

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2