![]() |
상세설명 | 제조사 |
N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCED INFORMATION
Product Summary
VDSS 12V
RDS(on) 18mΩ
Qg 3.2nC
Qgd 0.3nC
ID 4.8A
Typ. @ VGS = 4.5V, TA = +25°C
Description
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
Applications
DC-DC Converters Battery Management Load Switch
| ![]() Diodes |