EMB06N06A PDF 데이터시트 검색

N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5.2mΩ ID 80A G UIS, Rg 100% Tested S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL EMB06N06A LIMITS UNIT Gate Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2