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4Mbit CMOS 3.0 Volt Flash Memory
E ES S II
ADVANCED INFORMATION
Excel Semiconductor inc.
ES25P40
4Mbit CMOS 3.0 Volt Flash Memory with 75Mh- SPI Bus Interface
ARCHITECTURAL ADVANTAGES
Single power supply operation - 2.7V -3.6V for read and program operations Memory Architecture - Eight sectors with 512 Kb each Program - Page program ( up to 256 bytes) in 1.5ms (typical) - Program cycles are on a page by page basis Erase - 0.5s typical sector erase time - 3s typical bulk erase time Endurance - 100,000 cycles per sector
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