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600V N-Channel MOSFET
FCP22N60N , FCPF22N60NT N-Channel MOSFET
July 2009
FCP22N60N , FCPF22N60NT
N-Channel MOSFET
600V, 22A, 0.165Ω Features
RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A BVDSS>650V @ TJ = 150oC Ultra Low Gate Charge ( Typ. Qg = 45nC) Low Effective Output Capacitance 100% Avalanche Tested RoHS Compliant
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from pr
| ![]() Fairchild Semiconductor |