FDC606P PDF 데이터시트 검색

FDC606P December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features 6 A, 12 V. RDS(ON) = 26 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V RDS(ON) = 53 mΩ @ VGS = 1.8 V Applications Battery management Load switch Battery protection Fast switching speed High performance trench technology f