FDG313N PDF 데이터시트 검색

FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. Features 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(o