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상세설명 | 제조사 |
N-Channel MOSFET
FDMC8296 N-Channel Power Trench® MOSFET
March 2008
FDMC8296
N-Channel Power Trench
30V, 18A, 8.0mΩ
Features
Max rDS(on) = 8.0mΩ at VGS = 10V, ID = 12A Max rDS(on) = 13.0mΩ at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
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MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the
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