FDMC8296 데이터시트 (PDF)

FDMC8296 N-Channel Power Trench® MOSFET March 2008 FDMC8296 N-Channel Power Trench 30V, 18A, 8.0mΩ Features Max rDS(on) = 8.0mΩ at VGS = 10V, ID = 12A Max rDS(on) = 13.0mΩ at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant ® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the