FDS2170N7 데이터시트 (PDF)

FDS2170N7 May 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V High performance trench technology for extremely low