FDS4897C PDF 데이터시트 검색

FDS4897C Dual N & P-Channel PowerTrench® MOSFET November 2005 FDS4897C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V Q2: P-Channel