FDS6675BZ PDF 데이터시트 검색

FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 13mΩ at VGS = -10V, ID = -1