FDS89161LZ PDF 데이터시트 검색

FDS89161LZ Dual N-Channel PowerTrench® MOSFET June 2011 FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD protection level > 2KV typical (Note 4) 100% UIL Tested RoHS Compliant General Description This N-Channel l