FDT434P PDF 데이터시트 검색

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 5.5 A, 20 V. RDS(ON) = 0.050 Ω @ VGS = 4.5 V RDS(ON) = 0.070 Ω @ VGS = 2.5 V. Low gate charge (13nC typical) High performance trench