FLL200IB-3 PDF 데이터시트 검색

FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GH- (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multito