FP2250QFN PDF 데이터시트 검색

Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT FEATURES 29 dBm Output Power at 1-dB Compression 17 dB Power Gain at 2 GH- 1.0 dB Noise Figure at 2 GH- 42 dBm Output IP3 50% Power-Added Efficiency DESCRIPTION AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide , Indium Gallium Arsenide (AlGaAs, InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Sch