FQA6N90C_F109 PDF 데이터시트 검색

FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv, dt capability RoHS compliant September 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to