FQB3N60C PDF 데이터시트 검색

FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V Low gate charge ( typical 10.5 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance