FQD3N60C PDF 데이터시트 검색

FQD3N60C FQD3N60C 600V N-Channel MOSFET Features 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 10.5 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv, dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior