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상세설명 | 제조사 |
PNP HIGH PERFORMANCE TRANSISTOR
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Features
BVCEO > -60V IC = -3A High Continuous Current ICM = -6A Peak Pulse Current Low Saturation Voltage VCE(sat) < -300mV @ -1A Complementary NPN Type: FZT651Q Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
A Product Line of Diodes
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