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상세설명 | 제조사 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005, 03, 10 REVISED DATE :2006, 11, 24C
G1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m 600mA
Description
The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D)
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF.
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