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G1332E PDF 데이터시트 검색

 



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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005, 03, 10 REVISED DATE :2006, 11, 24C G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA Description The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF.
GTM
GTM

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