GA20JT12-247 PDF 데이터시트 검색

Normally OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode Advantages Compatible with Si MOSFET, IGBT Gate Drive ICs > 20 s Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit