GB25RF120K PDF 데이터시트 검색

PD - 94552 GB25RF120K IGBT PIM MODULE Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design VCES = 1200V IC = 25A, TC=80°C tsc > 10 s, TJ=150°C ECONO2 PIM VCE(on) typ. = 2.40V Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance