GT30J101 PDF 데이터시트 검색

GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 s (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg