GT50J102 PDF 데이터시트 검색

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm - Third-generation IGBT - Enhancement mode type - High speed. : tf = 0.30μs (Max.) - Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Tempe