H5N2004DL PDF 데이터시트 검색

H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features Low Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 A max (at VDS = 200 V) High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1.