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Silicon N Channel MOS FET High Speed Power Switching
H7N0308LD, H7N0308LS, H7N0308LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1124-0500 (Previous: ADE-208-1535C) Rev.5.00 Apr 07, 2006
Features
R
Low on-resistance DS (on) = 3.8 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
4
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N0308LD
H7N0308LS
R
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