![]() |
상세설명 | 제조사 |
Silicon N Channel MOS FET High Speed Power Switching
H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1130-0600 Rev.6.00 Oct 16, 2006
Features
Low on-resistance RDS (on) = 4.1 mΩ typ. 4.5 V gate drive devices High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
H7N0602LD
H7N0602LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(
| ![]() Renesas Technology |