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Silicon P Channel Power MOS FET Power Switching
HAT1069C
Silicon P Channel Power MOS FET Power Switching
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Features
Low on-resistance RDS(on) = 38 mΩ typ (at VGS = 4.5 V) High speed switching Capable of 1.8 V gate drive High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Index band 6 5 2 3 4 5 D D D D 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
2 1
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source volta
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