HAT1110R PDF 데이터시트 검색

HAT1110R Silicon P Channel Power MOS FET Power Switching REJ03G0416-0200 Rev.2.00 Oct.07.2004 Features Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 80 Gate to source voltage VGSS ±20 Drain current ID 1 Note1 Drain peak current ID(pulse) 6 Reverse drain current