HAT1139H PDF 데이터시트 검색

HAT1139H Silicon P Channel Power MOS FET Power Switching REJ03G1244-0200 Rev.2.00 Jun.22.2005 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 D 5 D 3 1 2 4 2 G 3 G 1, 4 Source 2, 3 Gate 5 Drain S 1 S 4 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body