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상세설명 | 제조사 |
Silicon N Channel Power MOS FET High Speed Power Switching
HAT2031T
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-529F (Z) 7th. Edition February 1999 Features
Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP 8
65 34
87
1 D
8 D
12
4 G
5 G
S S 2 3
S S 6 7
MOS1
MOS2
1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate
HAT2031T
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain cur
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