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상세설명 | 제조사 |
Silicon N/P Channel Power MOS FET Power Switching
HAT3021R
Silicon N, P Channel Power MOS FET Power Switching
REJ03G0415-0200 Rev.2.00 Oct.06.2004
Features
Capable of 4.5 V gate drive Low drive current High density mounting
Outline
SOP-8
7 8 D D 5 6 D D 5 7 6
2 G
4 G
8
3 1 2 S1 S3
4
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature S
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