HCP12NK65V PDF 데이터시트 검색

HCP12NK65V Apr 2014 HCP12NK65V 650V N-Channel Super Junction MOSFET BVDSS = 650 V RDS(on) typ = 0.34 ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : (Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings