HF10-12F PDF 데이터시트 검색

HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: PG = 20 dB min. at 10 W, 30 MH- IMD3 = -30 dBc max. at 10 W (PEP) Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.2 OC, W O O O DIM A B C D E F G H I J .240 , 6.10 .004 , 0.10 .085 , 2.16 .160