HFD2N60 PDF 데이터시트 검색

HFD2N60_HFU2N60 July 2005 HFD2N60 , HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7\S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60 1 2 3 HFU2N60 1.Gate 2. Drain 3. Source Absolute M