HFD2N65U PDF 데이터시트 검색

HFD2N65U_HFU2N65U HFD2N65U , HFU2N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 7\S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3. Source Absolute Ma