HFD5N70S PDF 데이터시트 검색

HFD5N70S_HFU5N70S Jan 2013 HFD5N70S , HFU5N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ID = 3.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7\S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N70S 1 2 3 HFU5N70S 1.Gate 2. Drain 3. Source Abso