HFD630A PDF 데이터시트 검색

HFD630A_HFU630A August 2015 HFD630A , HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ID = 9.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7\S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3. Source Absolut