HRI82N10K PDF 데이터시트 검색

HRW82N10K_HRI82N10K HRW82N10K , HRI82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 P (Typ.) @VGS=10V 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = P ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Par