HRLF180N10K PDF 데이터시트 검색

HRLF180N10K Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET FEATURES BVDSS = 100 V ID = 40 A Unrivalled Gate Charge : 94 nC (Typ.) Lower RDS(ON) : 16 P (Typ.) @VGS=10V Lower RDS(ON) : 17 P (Typ.) @VGS=4.5V 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25 TC = 100 (Note 1) Single Pulsed Avalanche