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상세설명 | 제조사 |
(HYB39S256xxx) 256 MBit Synchronous DRAM
256 MBit Synchronous DRAM
HYB 39S256400, 800, 160T
Preliminary Information
High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MH- ns ns ns ns Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read, Write control (× 4, × 8) Data Mask for byte control (× 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 8192 refresh cycles, 64 ms 7,8 Random Column Address every CLK (1-N Rule) Single 3.3 V ± 0
| ![]() Siemens Semiconductor |