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I882 PDF 데이터시트 검색

 



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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
Dc Components
Dc Components

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2