ICE10N65 PDF 데이터시트 검색

ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv, dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 9.5A 650V 0.35 41nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL