IDD06SG60C PDF 데이터시트 검색

3rd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 20mA2) Optimized for high temperature operation Lowest Figure of Merit QC, IF Product Summary VDC QC IF; TC< 130 °C