IRF8852PBF PDF 데이터시트 검색

PD - 96246 IRF8852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free HEXFET® Power MOSFET VDSS 25V RDS(on) max 11.3m @VGS = 10V 15.4m @VGS = 4.5V : : Id 7.8A 6.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International