IRF9520 PDF 데이터시트 검색

IRF9520 Data Sheet July 1999 File Number 2281.3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power eld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high